Analytic expression of capacitance characteristic of voltage - operated varactor 壓控變容二極管電容特性的解析表達式
Varactor tuned oscillator 變容二極管黨振蕩器
Gaas varactor diode 砷化鎵可變電抗二極管
Semiconductor discrete device . detail specification for gaas varactor diodes for 2ec600 series 半導體分立器件. 2ec600系列砷化鎵變容二極管詳細規范
Semiconductor discrete device . detail specification for silicon tuning varactor diode for type 2cc51e 半導體分立器件. 2cc51e型硅電調變容二極管詳細規范
Utilizing the benefits of varactor and bowtie and fractal structures , some interesting characteristics of these elements were found 該結構單元為設計寬頻帶、動態方向圖掃描的陣列反射天線奠定了基礎。
3 . a 4 . 2ghz vco tuned by an accumulation - mode mos varactor in tsmc 0 . 35 m sige bicmos process is obtained after debugging with the simulator spectrerf 3 .基于tsmc的0 . 35微米鍺硅bicmos工藝,采用spectrerf仿真器進行壓控振蕩器的調試和仿真。
While simulating the resonant circuits , we finished a microstrip resonance , which has high q - factor and fits to design w - band low phase noise oscillators . select beam lead hyperabrupt junction varactor and gunn die made in china as vco ’ s frequency turning component and minus resistance 此外,文中還對w頻段微帶結構直流偏置網絡、微帶波導過渡等外圍電路進行了仿真優化,設計方法和結論對毫米波微帶電路設計具有通用的參考價值。
On account of the low q - factor and small tuning range of the p - n junction varactor , the inversion - mode mos varactor is used in the lc voltage controlled oscillator in this thesis . the simulation results show that the designed lc voltage controlled oscillator has 15 % tuning range 3 .由于lc壓控振蕩器中的pn結變容管品質因數低、調諧范圍小,本次設計的lc壓控振蕩器采用了強反型mos變容管,仿真結果表明,所設計的lc壓控振蕩器具有15 %調諧范圍。