When a metal is brought into contact with an n-type semiconductor, electrons will flew from the semi-conductor to the metal . 使一塊金屬與n型半導體接觸時,電子將從半導體流到金屬。
This voltage creates a field across the gate oxide, which causes the adjacent p substrate to invert to n-type . 這一電壓在柵極氧化物層上產生一個電場,它導致毗鄰的P型襯底轉變成N型。
The synthesis and thermoelectric properties of n - type skutterudite compounds 12的熱電性能研究
The temperature change during reaction of n - type metal oxide gas sensor 型金屬氧化物氣敏元件的反應溫變
Preparation and thermoelectric properties of n - type la0 . 9nixco4 - xsb12 compounds 12化合物的制備及熱電性能研究
Electronic raman scattering in n - type - alloy semiconductors at low temperatures 型合金半導體的低溫電子喇曼散射
Detection of n - type protein 熟料n型蛋白試驗
N - type oxide gas sensor , n 型氧化物氣敏元件
N - type oxide gas sensor 型氧化物氣敏元件
Theory of reaction kinetics and statistical distribution of point defect of n - type metal oxide 型金屬氧化物點缺陷的統計分布